Thermal interface structure with integrated liquid cooling and methods

ABSTRACT

A method and device for thermal conduction is provided. A thermal interface device and method of formation is described that includes advantages such as improved interfacial strength, and improved interfacial contact. Embodiments of thermal conduction structures are shown that provide composite thermal conduction and circulated liquid cooling. Embodiments are further shown that require simple, low numbers of manufacturing steps and reduced thermal interface thickness.

TECHNICAL FIELD

[0001] The present invention relates generally to the field of heattransfer and, in particular, the present invention relates to thermalmanagement of electronic devices.

BACKGROUND

[0002] In one embodiment, the present invention is used to transfer heatgenerated by electronic devices or groups of devices, such astransistors, as are commonly included on integrated circuit (IC) chipssuch as processor chips.

[0003] In the field of electronic systems there is an incessantcompetitive pressure among manufacturers to drive the performance oftheir equipment up while driving down production costs. This isparticularly true regarding forming electronic devices such astransistors in IC's, where each new generation of IC must provideincreased performance, particularly in terms of an increased number ofdevices and higher clock frequencies, while generally being smaller ormore compact in size. As the density and clock frequency of IC'sincrease, they accordingly generate a greater amount of heat. However,the performance and reliability of IC's are known to diminish as thetemperature to which they are subjected increases, so it becomesincreasingly important to adequately dissipate heat from ICenvironments.

[0004] With the advent of high performance IC's and their associatedpackages, electronic devices have required more innovative thermalmanagement to dissipate heat. Increasing speed and power in processors,for example, generally carry with it a “cost” of increased heat in themicroelectronic die that must be dissipated. What is needed is a deviceand method to more effectively cool microelectronic dies containing IC'ssuch as processors. What is also needed is a device and method that isless expensive and easier to manufacture.

BRIEF DESCRIPTION OF THE DRAWINGS

[0005]FIG. 1 illustrates an information handling device according to oneembodiment of the invention.

[0006]FIG. 2A illustrates a side view of a processor assembly accordingto one embodiment of the invention.

[0007]FIG. 2B illustrates an isometric view of a processor assemblyaccording to one embodiment of the invention.

[0008]FIG. 3A illustrates a side view of an integrated circuit assemblyaccording to one embodiment of the invention.

[0009]FIG. 3B illustrates a side view of an integrated circuit assemblyaccording to one embodiment of the invention.

[0010]FIG. 3C illustrates a side view of a processor assembly accordingto one embodiment of the invention.

[0011]FIG. 4 illustrates a top view of an integrated circuit assemblyaccording to one embodiment of the invention.

[0012]FIG. 5A illustrates a side view of an integrated circuit assemblyaccording to one embodiment of the invention.

[0013]FIG. 5B illustrates another side view of an integrated circuitassembly according to one embodiment of the invention.

DETAILED DESCRIPTION

[0014] In the following detailed description of the invention referenceis made to the accompanying drawings which form a part hereof, and inwhich are shown, by way of illustration, specific embodiments in whichthe invention may be practiced. In the drawings, like numerals describesubstantially similar components throughout the several views. Theseembodiments are described in sufficient detail to enable those skilledin the art to practice the invention. Other embodiments may be utilized,and structural, logical, and electrical changes may be made, withoutdeparting from the scope of the present invention. The followingdetailed description is, therefore, not to be taken in a limiting sense,and the scope of the invention should be determined with reference tothe appended claims, along with the full scope of equivalents to whichsuch claims are entitled.

[0015] The term “active side” as used in this description is defined asthe conventional horizontal, large plane or surface of a chip or diewhere electrical devices have typically been fabricated, regardless ofthe orientation of the chip or die. The term “back side” as used in thisdescription is defined as a conventional horizontal, large plane orsurface of a chip or die that generally does not contain active deviceson its surface. The term “vertical” refers to a direction perpendicularto the horizontal as defined above. Prepositions, such as “on”,“higher”, “lower”, “above” and “below” are defined with respect to theconventional plane or surface being on the active side of the chip ordie, regardless of the orientation of the chip or die.

[0016] An example of an information handling system using processorchips is included to show an example of a higher level deviceapplication for the present invention. FIG. 1 is a block diagram of aninformation handling system 1 incorporating at least one electronicassembly 4 utilizing a thermal interface structure in accordance with atleast one embodiment of the invention. Information handling system 1 ismerely one example of an electronic system in which the presentinvention can be used. In this example, information handling system 1comprises a data processing system that includes a system bus 2 tocouple the various components of the system. System bus 2 providescommunications links among the various components of the informationhandling system 1 and can be implemented as a single bus, as acombination of busses, or in any other suitable manner.

[0017] Electronic assembly 4 is coupled to system bus 2. Electronicassembly 4 can include any circuit or combination of circuits. In oneembodiment, electronic assembly 4 includes a processor 6 which can be ofany type. As used herein, “processor” means any type of computationalcircuit, such as but not limited to a microprocessor, a microcontroller,a complex instruction set computing (CISC) microprocessor, a reducedinstruction set computing (RISC) microprocessor, a very long instructionword (VLIW) microprocessor, a graphics processor, a digital signalprocessor (DSP), or any other type of processor or processing circuit.

[0018] Other types of circuits that can be included in electronicassembly 4 are a custom circuit, an application-specific integratedcircuit (ASIC), or the like, such as, for example, one or more circuits(such as a communications circuit 7) for use in wireless devices likecellular telephones, pagers, portable computers, two-way radios, andsimilar electronic systems. The IC can perform any other type offunction.

[0019] Information handling system 1 can also include an external memory10, which in turn can include one or more memory elements suitable tothe particular application, such as a main memory 12 in the form ofrandom access memory (RAM), one or more hard drives 14, and/or one ormore drives that handle removable media 16 such as floppy diskettes,compact disks (CD), digital video disk (DVD), and the like. Examples ofmain memory 12 include dynamic random access memory (DRAM), synchronousdynamic random access memory (SDRAM), flash memory, static random accessmemory (SRAM), etc.

[0020] Information handling system 1 can also include a display device8, one or more speakers 9, and a keyboard and/or controller 20, whichcan include a mouse, trackball, game controller, voice-recognitiondevice, or any other device that permits a system user to inputinformation into and receive information from the information handlingsystem 1.

[0021] Although the present invention is found to be effective attransferring heat from IC surfaces, the invention is not limited to heattransfer from IC surfaces. The invention can be used in any settingwhere heat is to be conducted from one surface to another. For ease ofexplanation, the example of cooling an IC will be used.

[0022]FIG. 2A shows a cross-sectional representation of an IC package200. In embodiments where the IC die is a processor die, the IC packagecan be termed a processor assembly. IC package 200 includes an IC die210 mounted in “flip-chip” orientation with its active side facingdownward to couple with an upper surface of a substrate 220, such as acircuit board, through solder balls or bumps 212. Substrate 220 can be aone-layer board or a multi-layer board, and it can include additionalcontacts 222 on its opposite surface for mating with additionalpackaging structure (not shown).

[0023] Die 210 generates its heat from internal structure, includingwiring traces, that is located near its active side; however, asignificant portion of the heat is dissipated through its back side 214.Heat that is concentrated within the die is dissipated to a largesurface that is in contact with the die in the form of an integratedheat spreader 230 that is typically formed of metal such as copper oraluminum. In one embodiment, the integrated heat spreader 230 is formedinto a partial enclosure, and serves as a package cover for the die 210.In one embodiment, a sealant 234 is further included to isolate andsecure the integrated heat spreader 230 to the substrate 220. To improvethe thermal conductivity between the die 210 and the integrated heatspreader 230, a thermal interface material 240 is often provided betweenthe die 210 and integrated heat spreader 230.

[0024] In one embodiment, to further dissipate heat from the integratedheat spreader 230, a heat sink 250 optionally having fins 252 is coupledto the integrated heat spreader 230. Heat sink 250 dissipates heat intothe ambient environment. In one embodiment a second thermal interfacematerial 254 is further utilized to create a thermal pathway between theintegrated heat spreader 230 and the heat sink 250.

[0025] The thermal interface material 240 shown in FIG. 2A is intendedto be a general illustration of a thermal interface material or thermalinterface structure. In the following detailed description, specificdetails of thermal interface structures and assemblies are illustratedfor given embodiments of the invention.

[0026]FIG. 2B shows an embodiment of an IC package 230 without anadditional heat sink 250 attached as described above. The integratedheat spreader 230 is shown in an embodiment formed as a package cover.The edges of the integrated heat spreader 230 form an enclosure with thesubstrate 220 where the die (not shown) is substantially enclosed. Inone embodiment, an opening 232 is included in the integrated heatspreader 230. In one embodiment, the opening 232 provides a relief forvariations in pressure due to thermal changes in the die.

[0027]FIG. 3A shows a heat conducting assembly 300, including a heatspreader 320 and a thermal interface structure 310. In one embodiment,the heat spreader 320 includes an integrated circuit package cover,although the invention is not so limited. In one embodiment, the heatspreader 320 includes an integrated heat spreader. In one embodiment theheat spreader 320 includes the material copper, although other heatconducting materials, such as aluminum or AlSiC are within the scope ofthe invention. In one embodiment, the heat spreader 320 is coated withnickel (Ni) on at least a portion of its exterior surfaces to providedesirable chemical interaction properties, such as with its environment,or other components.

[0028] The thermal interface structure 310 of FIG. 3A includes a numberof guide structures 312 and a number of spaces 314. In embodiments thatwill be described below, the number of guide structures 312 and thenumber of spaces 314 are used to conduct a fluid within the thermalinterface structure 310 to enhance thermal conduction within the thermalinterface structure 310. In one embodiment, the number of guidestructures includes a perimeter seal portion that will be described inmore detail in sections below.

[0029] In one embodiment, the thermal interface structure 310 includes amaterial that is plastically deformable under certain conditions oftemperature and pressure. An operation such as cold forming causesplastic deformation in materials at temperatures below their meltingpoints. In one embodiment, the thermal interface structure 310 includesa metal. In one embodiment, the thermal interface structure 310 includessolder. Suitable materials for the thermal interface structure 310include, but are not limited to tin (Sn), indium (In), and silver (Ag).Alloys of tin, indium and silver, with each other, or with other metalsare also within the scope of the invention.

[0030]FIG. 3A further shows an interface 318 between the thermalinterface structure 310 and the heat spreader 320. In one embodiment theinterface 318 is formed at least partially using plastic deformation.

[0031] A noted above, in a deformation operation such as cold forming,at least a portion of the material being formed deforms plastically.After cold forming the thermal interface structure 310 against the heatspreader 320, a number of cold formed features are observed at the firstinterface 318. In one cold formed feature, the deformation causes thedeforming portion of the material to flow in a conforming manner intosurface features of the heat spreader 320. In this way, substantiallyall gaps present at the interface 318 are removed as the thermalinterface structure 310 is deformed into surface features on the heatspreader 320.

[0032] In one embodiment, a cold formed feature includes a mechanicalbond that is formed at the interface 318 during plastic deformation. Ina mechanical bond, certain portions of the thermal interface structure310 flow around asperities or surface features of the heat spreader 320.After deformation is complete, the interface 318 is at least partiallyheld together mechanically by the asperities or surface features beingembedded within the flowed portion of the thermal interface structure310. This is in contrast to chemical bonding where actual bonds areformed between atoms of the thermal interface structure 310 and atoms ofthe heat spreader 320. In one embodiment, the interface 318 is roughenedon the heat spreader 320 to enhance a mechanical bond. In oneembodiment, a combination of chemical bonding, such as a formation ofintermetallic compounds, and mechanical bonding are formed at the firstinterface 303. For example, in embodiments where the heat spreader 320includes a nickel coating, and the thermal interface structure 310includes indium, an intermetallic compound of indium and nickel isformed.

[0033] In one embodiment, a cold formed feature includes work hardeningof the thermal interface structure 310. The plastic deformation ofportions of the thermal interface structure 310 acts to raise thehardness and strength of the thermal interface structure 310.

[0034] In one embodiment, the plastic deformation takes place below amelting temperature of the material being deformed. Once a material,such as the thermal interface structure 310, is in its liquid state,wetting of the liquid against the other surface, such as the heatspreader 320 becomes an issue. Due to chemical incompatibility, theliquid thermal interface structure 310 may not wet well against the heatspreader 320. In such circumstances, undesirable voids will form at theinterface 318. The voids are undesirable because they do not conductheat effectively, and they provide less effective mechanical strength atthe interface 318. By maintaining the temperature below a meltingtemperature of the thermal interface structure 310, issues of wetting atthe interface 318 are avoided.

[0035] In one embodiment, the plastic deformation takes place aboveambient temperatures. As temperature increases, the strength of thethermal interface structure 310 decreases. In this way, the forcenecessary to cause plastic deformation can be adjusted by varying thetemperature. By maintaining the temperature above ambient temperatures,plastic deformation is accomplished with lower forces, and the thermalinterface structure 310 flows better into surface features of the heatspreader 320 with advantages such as better interface contact, andhigher mechanical strength as discussed above. In one embodiment, theplastic deformation takes place at a temperature between approximately130° C. and 145° C. In one embodiment, a load of approximately 20-100pounds is used in the plastic deformation operation. In one embodiment,conditions such as temperature and load are sustained for approximatelyone minute during the plastic deformation operation. In embodimentsusing substantially pure indium, processing conditions of pressure andtemperature are suited to plastic deformation without damage to otherstructures such as integrated circuit chips.

[0036]FIG. 3B shows a chip assembly 302 further including an integratedcircuit chip 330. In one embodiment, the integrated circuit chip 330includes a processor chip. A backside 332 of the integrated circuit chip330 and an active side 334 of the integrated circuit chip 330 arefurther shown in FIG. 3B. In one embodiment, the integrated circuit chip330 is mounted in flip-chip orientation, with the active side 334 up asillustrated in FIG. 3B.

[0037] In one embodiment, the thermal interface structure 310 isattached to the heat spreader 320 using methods described above prior toattaching the thermal interface structure 310 to the integrated circuitchip 330. In one embodiment, the thermal interface structure 310 isattached to the integrated circuit chip 330 using methods describedabove prior to attaching the thermal interface structure 310 to the heatspreader 320. In one embodiment, the thermal interface structure 310 isattached concurrently using methods described above to both the heatspreader 320 and the integrated circuit chip 330. Accordingly, selectedembodiments include one or more interfaces of the thermal interfacestructure 310 (such as interface 318, or the opposite interface at thebackside 332 of the integrated circuit chip 330) with cold formedfeatures.

[0038]FIG. 3C shows a processor assembly 304. The heat spreader 320 isshown with the thermal interface structure 310 and a processor chip usedas the integrated circuit chip 330. In the embodiment shown in FIG. 3C,a sealant 322 is shown between the heat spreader 320 and a substrate350. A heat sink 340 is also shown with a number of fins 342. Othercomponents are included in FIG. 3C that are similar to those illustratedin FIG. 2A.

[0039]FIG. 3C shows a thickness 316 of the thermal interface structure310. In one embodiment, the thickness 316 is in a range of approximately0.0025-0.0050 cm thick. In one embodiment, manufacturing methods such ascold forming at least one interface of the thermal interface structure310 allows a thickness 316 to be reduced to the range of 0.0025-0.0050cm. In one embodiment, the use of manufacturing methods such as coldforming on at least one interface of the thermal interface structure 310allows a reduction in process steps such as formation of intermediateinterface layers.

[0040] In selected embodiments, a liquid material is placed within thenumber of spaces 314 in the thermal interface structure 310. In oneembodiment, the liquid material includes a liquid metal material. In oneembodiment, the liquid material includes liquid gallium metal. Galliummetal is liquid at ambient temperatures (around 30° C.), and is a goodconductor of heat at approximately 41 W/mK. Other liquid materials asidefrom gallium or other liquid metals are acceptable provided they areliquid at appropriate operating temperatures and are effectiveconductors of heat. In selected embodiments, during a heat conductingoperation, the liquid material is circulated within the thermalinterface structure 310 to enhance heat spreading and heat dissipation.In one embodiment, a width 317 of selected spaces in the number ofspaces 314 is tailored to adjust the circulation flow. In oneembodiment, the width 317 of at least one of the number of spaces 314 isin a range of approximately 0.0025-0.0050 cm.

[0041] Embodiments of the thermal interface structure 310 as describedabove provide a composite heat conducting mode of operation. In oneembodiment, heat is conducted into the liquid material, whileconcurrently heat is conducted into the number of guide structures 312.A composite thermal conductivity of the thermal interface structure 310can therefore be calculated with a contribution from the liquid materialand a contribution from the number of guide structures 312. Oneadvantage of using a metal material to form the number of guidestructures 312 is that the heat conduction contribution from the numberof guide structures 312 is high compared to other materials such aspolymers or ceramics, etc. Indium metal, for example, has a thermalconductivity of approximately 82 W/mK.

[0042] In one embodiment, the number of spaces 314 form a directinterface at interface 318 with the heat spreader 320. In oneembodiment, the number of spaces 314 form a direct interface at backside332 of the integrated circuit chip 330. As illustrated in FIG. 3C, inone embodiment, the number of spaces 314 form a direct interface at boththe interface 318 with the heat spreader 320, and at the backside 332 ofthe integrated circuit chip 330. A direct interface of the liquidmaterial with the integrated circuit chip 330 enhances heat conductioninto the liquid material from the integrated circuit chip 330 withoutintervening layers. Similarly, a direct interface of the liquid materialwith the heat spreader 320 further enhances conduction of heat withinthe liquid material out to the heat spreader 320.

[0043]FIG. 4 shows a thermal interface cooling assembly 400. The coolingassembly 400 includes a thermal interface structure 410 coupled to aportion of a surface of an integrated circuit chip 430. A section of anintegrated heat spreader 420 is shown surrounding the integrated circuitchip 430 and the thermal interface structure 410. Although the thermalinterface structure 410 shown in FIG. 4 covers only a fraction of thesurface of the integrated circuit chip 430 (such as a high heatgenerating area), other embodiments include a thermal interfacestructure 410 that entirely covers the surface of the integrated circuitchip 430.

[0044] The thermal interface structure 410 includes a perimeter sealportion 411 and a number of guide portions 412 within an area defined bythe perimeter seal portion 411. In one embodiment, the perimeter sealportion 411 functions to retain an amount of liquid within spaces 414 ofthe thermal interface structure 410, between the integrated circuit chip430 and the heat spreader. In one embodiment, the perimeter seal portion411 and the number of guide portions 412 are formed integrally from asingle sheet or portion of base material. Other embodiments may includea seal portion that is formed separately from the number of guideportions 412. In one embodiment, the perimeter seal portion 411 and thenumber of guide portions 412 are formed concurrently using a stamping ordie cutting operation. In one embodiment, the perimeter seal portion 411and the number of guide portions 412 are formed concurrently as a coldformed interface is formed on a surface such as a surface of a heatspreader as described in embodiments above. For example, a stamping diecuts the perimeter seal portion 411, and concurrently provides a loadused to cold form the perimeter seal portion 411.

[0045]FIG. 4 further shows a circulation system including a pump 460 anda number of transmission lines 462. The number of transmission lines 462are coupled to the thermal interface structure 410 at a firstinlet/outlet 464 and a second inlet/outlet 466. In one embodiment, afill port 468 is included to facilitate introduction of the liquidmaterial to the spaces 414 during manufacture of the cooling assembly400. In one embodiment, the fill port 468 includes a valve. In oneembodiment, a heat exchanger 470 is further included. Elements such asthe pump 460 and the heat exchanger 470 are shown in block diagram formin FIG. 4, and specific locations should not be implied. For example, inone embodiment, the heat exchanger 470 is integral with the pump 460.Examples of heat exchangers 470 include fluid reservoirs, devices withfins, etc.

[0046] In operation, the thermal interface structure 410 functions toboth spread heat laterally across the surface of the integrated circuitchip 430 and to conduct heat away from the integrated circuit chip 430.Heat removal is accomplished using features such as circulation of theliquid material external to the thermal interface structure 410, andconduction of heat through the thermal interface structure 410 to theheat spreader.

[0047]FIG. 5A shows one embodiment of an integrated circuit chipassembly 500. The assembly 500 includes a heat spreader 520, a thermalinterface structure 510 and an integrated circuit chip 530. Similar toembodiments above, the thermal interface structure 510 includes a numberof guide structures 512 and the number of spaces 514. One configurationof an inlet/outlet 516 is shown. In FIG. 5A, the inlet/outlet 516 passesthrough the heat spreader 520 in a direction substantially perpendicularto a main surface of the heat spreader 520.

[0048]FIG. 5B shows another embodiment of an integrated circuit chipassembly 502. The assembly 502 includes a heat spreader 520, a thermalinterface structure 510 and an integrated circuit chip 530. In FIG. 5B,an inlet/outlet 518 is shown passing through the heat spreader 520 at aside portion of the heat spreader 520. Although two possibleconfigurations of inlet/outlet structures are shown, the invention isnot so limited. One of ordinary skill in the art, having the benefit ofthe present disclosure will recognize that other possible configurationsof inlet/outlet structures are within the scope of the invention.

CONCLUSION

[0049] Devices and methods including thermal interface structures asdescribed above include advantages such as improved interfacialstrength, and improved interfacial contact. This in turn leads toimproved heat conduction away from hot areas of a chip. Embodimentsdescribed above further include advantages of composite thermalconduction and circulated liquid cooling. Embodiments are shown thatrequire simple, low numbers of manufacturing steps and reduced thermalinterface thickness.

[0050] Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement which is calculated to achieve the same purpose maybe substituted for the specific embodiment shown. This application isintended to cover any adaptations or variations of embodiments describedabove. It is to be understood that the above description is intended tobe illustrative, and not restrictive. Combinations of the aboveembodiments, and other embodiments will be apparent to those of skill inthe art upon reviewing the above description. The scope of the inventionincludes any other applications in which the above structures andfabrication methods are used. The scope of the invention should bedetermined with reference to the appended claims, along with the fullscope of equivalents to which such claims are entitled.

What is claimed is:
 1. An integrated circuit chip assembly, comprising:an integrated circuit chip; a heat spreader; a thermal interfacestructure, including a perimeter seal portion, the seal portion coupledbetween the heat spreader and at least a portion of a surface of theintegrated circuit chip; and wherein at least one interface of theperimeter seal portion includes cold formed features.
 2. The integratedcircuit chip assembly of claim 1, wherein the thermal interfacestructure further includes a liquid material located within theperimeter seal portion and between the integrated circuit chip and theheat spreader.
 3. The integrated circuit chip assembly of claim 2,wherein the liquid material is in direct contact with both theintegrated circuit chip and the heat spreader.
 4. The integrated circuitchip assembly of claim 2, wherein the liquid material includes liquidgallium metal.
 5. The integrated circuit chip assembly of claim 1,further including a number of guide portions within the perimeter sealportion.
 6. The integrated circuit chip assembly of claim 1, wherein theperimeter seal portion is formed from indium.
 7. The integrated circuitchip assembly of claim 1, wherein at least one interface of theperimeter seal portion further includes an intermetallic compound formedfrom the mating materials.
 8. The integrated circuit chip assembly ofclaim 5, wherein the guide portions form longitudinal spaces havingwidths of approximately 0.0025-0.0050 cm.
 9. The integrated circuit chipassembly of claim 1, wherein the thermal interface structure has athickness of approximately 0.0025-0.0050 cm.
 10. A processor assembly,comprising: a processor chip; a heat spreader; a thermal interfacestructure, including; a metal perimeter seal portion to contain anamount of liquid, the seal portion coupled between the heat spreader andat least a portion of a surface of the integrated circuit chip; anamount of liquid material located within the perimeter seal portion; anda pump operably coupled to the perimeter seal portion capable ofcirculating the amount of liquid material through the perimeter sealportion.
 11. The processor assembly of claim 10, wherein at least oneinterface of the metal perimeter seal portion includes cold formedfeatures.
 12. The processor assembly of claim 10, wherein the thermalinterface structure further includes a number of guide portions withinthe perimeter seal portion to channel flow of the amount of liquidmaterial.
 13. The processor assembly of claim 10, wherein the metalperimeter seal portion is formed from indium.
 14. The processor assemblyof claim 10, wherein the heat spreader includes a package cover thatsubstantially encloses the chip and thermal interface structure on asubstrate.
 15. The processor assembly of claim 14, further including asealant between the package cover and the substrate.
 16. The processorassembly of claim 10, further including a heat sink coupled to the heatspreader.
 17. The processor assembly of claim 10, further including aheat exchanger operably coupled with the pump and the thermal interfacestructure, the heat exchanger located apart from the thermal interfacestructure.
 18. An information handling system, comprising: a dynamicrandom access memory; a system bus coupled to the dynamic random accessmemory; a processor assembly coupled the system bus, the processorassembly including: a processor chip; a heat spreader; a thermalinterface structure, including; a metal perimeter seal portion tocontain an amount of liquid, the seal portion coupled between the heatspreader and at least a portion of a surface of the integrated circuitchip; an amount of liquid material located within the perimeter sealportion; and a pump operably coupled to the perimeter seal portioncapable of circulating the amount of liquid material through theperimeter seal portion.
 19. The information handling system of claim 18,wherein the thermal interface structure is coupled between the heatspreader and at least a portion of a backside surface of the integratedcircuit chip in flip-chip orientation.
 20. The information handlingsystem of claim 18, further including a heat exchanger operably coupledwith the pump and the thermal interface structure, the heat exchangerlocated apart from the thermal interface structure.
 21. The informationhandling system of claim 18, wherein the dynamic random access memoryincludes synchronous dynamic random access memory.
 22. A method ofcooling an integrated circuit die, comprising: conducting heat from asurface of an integrated circuit die into a metal seal structure locatedin a region between the surface of the integrated circuit die and a heatspreader; conducting heat from the surface of the integrated circuit dieinto an amount of liquid material contained within the region and withinthe metal seal structure; circulating the amount of liquid material. 23.The method of claim 22, wherein circulating the amount of liquidmaterial within the region includes circulating the amount of liquidmaterial external to the region to a heat transfer device.
 24. Themethod of claim 22, wherein conducting heat from the surface of theintegrated circuit die into an amount of liquid material includesconducting heat into an amount of liquid material that forms a directinterface with both the integrated circuit die and the heat spreader.25. A method of manufacturing an integrated circuit assembly,comprising: forming a perimeter seal portion; attaching the perimeterseal portion between an integrated circuit chip and a heat spreaderwherein at least one interface of the perimeter seal portion is formedusing cold forming techniques; and placing an amount of liquid materialbetween the integrated circuit chip and the heat spreader within theperimeter seal portion.
 26. The method of claim 25, further includingoperatively coupling a pump to the seal portion to circulate the amountof liquid.
 27. The method of claim 26, further including operativelycoupling a heat exchanger to the pump and the seal portion.
 28. Themethod of claim 25, wherein forming a perimeter seal portion includesstamping a perimeter seal portion
 29. The method of claim 25, whereinforming a perimeter seal portion is concurrent with attaching the sealportion to at least one interface.
 30. The method of claim 25, whereinforming a perimeter seal portion includes forming an indium perimeterseal portion.